Talos F200E (S)TEM

Talos F200E (S)TEM for rapid semiconductor analysis 

The Thermo Scientific Talos F200E (S)TEM (Scanning Transmission Electron Microscope) provides high-resolution STEM and TEM imaging with minimal distortion, combined with high-throughput energy-dispersive X-ray spectroscopy (EDS) functionality, tailored for a wide range of semiconductor defect analysis and research applications. 

 

Supporting the fast pace of process development and yield ramp significantly challenges semiconductor analysis labs, as they must provide repeatable, high-resolution characterization of a wide variety of materials and devices. The Talos F200E (S)TEM was designed with these labs in mind, enabling faster EDS analysis, low TEM image distortion, and streamlined operation with unified functionality in Thermo Scientific Velox Software. The speed and repeatability improvements make the Talos F200E (S)TEM an excellent choice for device analysis, defect characterization, and yield support. 

Instrument features of the Talos F200E (S)TEM

High-quality S/TEM imaging

High-throughput TEM imaging with minimized distortion and simultaneous, multiple-signal detection and contrast-optimized S/TEM imaging is supported by our unified, easy-to-use Velox Software.

Precise, high-speed chemical characterization

Rapid, precise, qualitative, or quantitative EDS acquisition and analysis and complimentary EELS acquisition.

Dedicated semiconductor-related applications

Simultaneous operation of multiple S/TEM detectors, integrated differential phase contrast (iDPC) imaging, S/TEM field-of-view matching, instant EDS map quantification, and more.

S/TEM Techniques for Comprehensive Failure Analysis

For Research Use Only. Not for use in diagnostic procedures.