Talos F200E (S)TEM Resources

Resources to improve your lab’s productivity 

Find out how the Thermo Scientific Talos F200E (S)TEM can bring productivity to your lab. Our resources page provides everything from comprehensive overviews to in-depth tutorials and publications on techniques, technologies, and more.

Talos F200E (S)TEM videos and visuals

Talos Distortion Infographic

Talos Productivity Infographic

Talos TEM Family Infographic

Talos F200E (S)TEM datasheet for semiconductors

Explore detailed specifications of the Talos F200E (S)TEM for semiconductor research and fabrication.

Talos datasheet

The Talos F200E (S)TEM quickly delivers precise, quantitative characterization of semiconductor devices in multiple dimensions. With innovative features designed to optimize productivity, precision and ease of use, the Talos F200E (S)TEM is an ideal choice for semiconductor labs in an industrial environment.

Webinars

Discover in-depth video coverage of Talos F200E (S)TEM applications and techniques, from power devices to materials research and development.

4D STEM Video Courses

These educational courses and hands- on sessions are designed to provide a comprehensive and practical understanding of 4D STEM, ranging from the fundamentals to advanced techniques and applications. Whether you’re new to 4D STEM or looking to enhance your skills, this series will help you learn how to optimize your acquisition settings for techniques like phase and orientation mapping, strain field measurement, and even spatial resolution improvement.

Semiconductor Transmission Electron Microscopy Fundamentals

This webinar covers the fundamentals of transmission electron microscopy (TEM) and scanning transmission emission microscopy (STEM), specifically how they relate to semiconductors. Topics covered include TEM imaging, elemental analysis, STEM vs TEM, TEM metrology, and other TEM applications for semiconductor production and analysis.

Sample preparation and TEM imaging techniques for advanced power devices

Compound semiconductors like SiC and GaN are increasingly attractive for their ability to operate at higher voltages, currents, and frequencies, especially in power and RF devices. However, fabricating wafers using these compounds can be challenging and can adversely impact manufacturing yield and costs. Where identifying traditional defects in the device still exists, a new challenge is locating and characterizing crystalline dislocations in substrates.

For Research Use Only. Not for use in diagnostic procedures.