Search
High-resolution S/TEM imaging and analysis techniques for semiconductors
The Thermo Scientific Talos F200E (S)TEM (Scanning Transmission Electron Microscope) incorporates streamlined capabilities with high-throughput and flexibility for research, characterization, analysis, and metrology. This system makes imaging and analytical techniques accessible to users of varying experience levels by enabling access to precise, high-resolution insights into sample characteristics, defects, and critical dimensions. From imaging and analysis with intuitive software to spectroscopy and diffraction, this user-friendly instrument lets you obtain crucial nanoscale information for failure analysis and characterization needs.
Whether you are investigating novel materials, performing failure analysis, or interrogating device feature dimensions, the Talos F200E (S)TEM can help you acquire key insights down to the atomic scale for semiconductor applications.
S/TEM imaging
What is S/TEM imaging?
S/TEM imaging is a method whereby a thin sample is illuminated with an electron beam. Transmission electron microscopy (TEM) and, increasingly, scanning transmission electron microscopy (S/TEM) are critical techniques for semiconductor analysis, unlocking detailed insights into the atomic structure and composition of samples that are not achievable with other techniques.
S/TEM generates several distinct signals from scattered electrons, revealing critical structural and compositional details. Together, these imaging modes make S/TEM instrumental in advancing our understanding of nanoscale structures, interfaces, and characteristics.
High-resolution S/TEM images show atomic lattice and nanoscale interfaces.
Spectroscopy
How can spectroscopy be used to reveal chemical information?
Foundational techniques include energy dispersive X-ray spectroscopy (EDS) for atomic-scale elemental and phase characterization and electron energy loss spectroscopy (EELS) for insights into electronic and optical properties.
The Talos F200E (S)TEM leverages advanced detector designs for exceptional cleanliness (Super-X) and significant throughput (up to 50% improvement with Dual-X high collection angle) during EDS acquisition. Combine this powerful capability with an X-CFEG source to improve EELS resolution and achieve extensive analytical power with simultaneous EDS and EELS analysis.
EDS elemental mapping comparison in a GaN device.
Nitrogen mapping in a GaN device with EELS (left to right, GaN, SiN, TiN, all).
Differential phase contrast (DPC)
What are the advantages of differential phase contrast?
DPC requires a specialized segmented detector that allows shifts in the position of the generated diffraction pattern to be measured. The integral and derivative of these measured shifts yield (i)DPC and (d)DPC information, which give insights into electric potential and charge in the sample, respectively.
Our patented live iDPC detection method also exposes low-Z elements with bright contrast and dark background and has been shown to have a higher signal to noise ratio.
DPC grain visualization.
4D STEM
How does 4D STEM work?
In 4D STEM, the probe is scanned over the sample plane and, at each scanned pixel, a diffraction pattern is acquired, generating a 4D cube of characteristic data (2-dimensions for scanning and
2-dimensional diffraction pattern).
When is 4D STEM used?
4D STEM can be used for mapping crystal grain orientation and strain distribution by measuring local lattice distortions. Electric and magnetic fields indicated by shifts in the transmitted electron beam's phase at each scan point can give insights to dopant regions when combining 4D STEM and DPC capabilities.
Diffraction patterns are used in generating 4D STEM data
S/TEM metrology
Why is S/TEM metrology important in semiconductor analysis?
No other technique can provide ground-truth, direct measurements of atomic-scale device dimensions with the resolution of S/TEM, making it a critical final step for gathering process insights during yield ramp and development of semiconductor devices.
It is therefore crucial that S/TEM metrology results are repeatable between users and reliable from a stable, well-aligned instrument. The Talos F200E (S)TEM has rigorous magnification calibration and distortion specifications but also automated user-level alignments with AutoSTEM that support both these important requirements.
Metrology executed on a nanowire transistor structures.
For Research Use Only. Not for use in diagnostic procedures.