Verios 5 XHR SEM Applications

Redefining process control in photolithography

Photoresists used in photolithography are highly sensitive to electron beam exposure, often leading to local shrinkage and degraded structural integrity during SEM imaging.

 

This poses a significant challenge in accurately inspecting and controlling the photolithographic process, especially for structures at the 22 nm design node and below.

At 1 keV and 16 pA, the photoresist structure started shrinking in the local area used for observation

The Thermo Scientific Verios 5 XHR SEM addresses this challenge with sub-nanometer resolution at low beam voltages, minimizing electron-induced damage while maintaining high image fidelity.

 

Using extremely low-voltage imaging, beam deceleration, and minimal sample prep, the Verios 5 XHR SEM delivers clear, detailed images of coated and uncoated photoresists to allow inspection of, for example, surface details, the footing, and the roughness of the sidewalls of the resist lines. This ensures high-resolution and high-magnification results, but also damage-free imaging.

(Left) he depth of focus at 500 V in the tilted image allows inspection of the footing and roughness of the sidewalls of the photoresist lines. (Right) Uncoated photoresist using 2 mm working distance provides a nearly charge free image combined with a clear view of the cross section and very detailed surface information. No beam damage is apparent.

For Research Use Only. Not for use in diagnostic procedures.