Thermo Scientific™

Meridian™ M System for Semiconductors

Thermo Scientific™ Meridian™ M system system uses high sensitivity broadband DBX™ photon emission and Static Laser Stimulation techniques to pinpoint the location of electrical faults. Given results from wafer sort / chip probe, the Meridian M system delivers localization suitable for nanoprobing or imaging techniques such as SEM or TEM.

Custom-designed optics, a set of user-selectable wavelength ranges and low background noise allow Meridian M to be optimized for a variety of routine or challenging fault types, like large-area process variation in advanced memory devices that leads to anomalous leakage; high resistivity wordline to wordline or bitline to bitline shorts within memory cells; resistive faults in low voltage GPUs and other low-voltage logic circuits; and any weakly emitting faults requiring long integration time.

The Meridian M system accommodates full wafers in addition to packaged die, allowing FA engineers to compare good die to bad die, aiding interpretation of complex emission images.

Capabilities include highest sensitivity emission detection, for low VDD and low leakage; advanced constant-current and constant-voltage Static Laser Stimulation (SLS) techniques; Ability to detect thermal faults, including challenging high-ohmic shorts and electromigration.

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Description

High Sensitivity Photon Emission

High-sensitivity photon emission (1) using standard photon-emission detection and (2) adding broadband thermal emission capability. Comparison of the images indicates the location of the root-cause defect.

Full-featured Static Laser Stimulation

High-ohmic wordline-to-wordline short identified by constant-voltage SLS. The Fault Diagnostics (FDx) system on Meridian M delivers high signal-to-noise across a wide range of operating modes.



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Manuals & protocols