Fab Automated Solutions

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Maximize semiconductor yield with fast time to data

Semiconductor fabs are under constant pressure to make faster decisions, improve yields, and maintain tight process control. Precise through volume critical dimension profiles (3D metrology) and characterization of buried structures is required to avoid yield loss. However, critical analysis often depends on labs outside the fab, which introduces multi-day delays that limit process visibility and response time. These delays reduce engineers’ ability to respond quickly and increase the risk of missing early signs of process issues.

 

Discover how our fab automated solutions accelerate access to critical data by placing systems in the fab instead of the lab, enabling engineers to optimize process control, boost yield, and gain full ownership of their data by using fab systems engineered for quick process decisions.

3D NAND memory cell through-stack SEM metrology using diagonal milling on the Thermo Scientific Helios MX1 PFIB-SEM.

Automated deep mill cross-section analysis of 3D NAND etch channels on the Thermo Scientific Helios 5 EXL FIB-SEM.

TSV misalignment exposed using plasma FIB cross section milling. 

TSV image and metrology revealing width and height critical dimensions.

Fab automation solutions

We recognize the significance of fast time to data to maintain process control in the fab. Leveraging our expertise and advanced tools, we offer customized solutions to address the distinct challenges encountered in semiconductor development. Explore our fab automated solutions instruments below to learn more.

Helios MX1 PFIB-SEM

The Thermo Scientific Helios MX1 PFIB-SEM is a fully automated system that enables rapid analysis of 300 mm wafers. With multi-ion species plasma FIB technology, ultra-high-resolution SEM imaging, and powerful automation, it facilitates precise metrology and defect analysis of buried structures beyond the reach of traditional fab systems.

Helios 5 PXL PFIB-SEM

The Thermo Scientific Helios 5 PXL PFIB-SEM is a xenon plasma focused ion beam scanning electron microscope that features high-performance, in-line metrology, wafer-level delayering, and process monitoring to efficiently provide critical insights for process development and manufacturing engineers.

Helios 5 EXL FIB-SEM

The Thermo Scientific Helios 5 EXL FIB-SEM offers wafer-level defect root cause analysis workflows using a gallium ion source. The deep mill workflow is designed for automated cross-section analysis on tall structures such as 3D NAND. The 1-click piece extraction TEM prep workflow is suitable for smaller defects found in DRAM or 3D NAND.

For Research Use Only. Not for use in diagnostic procedures.