The Thermo Scientific Centrios Advanced Circuit Edit System enables rapid prototyping and first silicon debug and repair for 14 nm and above design rule devices. It enables advanced front and backside edits with unparalleled editing control and precision. Using an innovative simultaneous dual nozzle gas delivery system, with the broadest portfolio of chemistries and the latest FIB technology, the Centrios System offers fast, efficient, and cost-effective editing on advanced integrated circuits for reduced time to market.

When circuit edits require precision, but the market wants it fast, the Centrios Advanced Circuit Edit System helps meet the demands of the high-tech world. The new Centrios System enables high-performance front and backside edits on advanced integrated circuits for 14 nm and above design nodes with unparalleled precision.

Cost-cutting and time-saving gas delivery system maximizes precision and control.

An innovative simultaneous dual-nozzle gas delivery system offers precision etching, reducing circuit design costs for faster time to market.

 

Key Features

Imaging and milling resolution

Using field-proven Thermo Scientific Tomahawk WDR FIB technology with latest beam profile improvements.

Enhanced milling precision and control

Planarity/uniformity, delayering/etch stopping and high-acuity drilling of high-aspect-ratio vias using simultaneous dual-nozzle gas delivery system and proprietary gas chemistry portfolio.

Dedicated circuit edit focused platform

Integration of key components, such as gas chemistry delivery, enables optimized manual and automated applications.

Lower cost of operation

Thermo Scientific NEXS CAD software for navigation and Thermo Scientific iFAST software enables customized automation to improve efficency and ease of use.


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Specifications

Ion Column

  • Tomahawk WDR Ion Column, gallium liquid metal, 1000 hour lifetime

Image resolution

  • 3.5 nm

Acceleration voltage

  • 0.5 kV - 30 kV

Beam current

  • 1.2 pA - 65 nA

Stage

  • 5-axes motorized eucentric
    • X, Y motion 100 mm
    • Tilt -10° to 60°
    • Rotation 360°

End-point detection

  • Simultaneous SE/specimen current

Applications

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Semiconductor Pathfinding and Development

Advanced electron microscopy, focused ion beam, and associated analytical techniques for identifying viable solutions and design methods for the fabrication of high-performance semiconductor devices.

Semiconductor Failure Analysis

Semiconductor Failure Analysis

Increasingly complex semiconductor device structures result in more places for failure-inducing defects to hide. Our next-generation workflows help you localize and characterize subtle electrical issues that affect yield, performance, and reliability.

Circuit Edit

Advanced, dedicated circuit edit and nanoprototyping solutions, which combine novel gas-delivery systems with a broad portfolio of chemistries and focused ion beam technology, offer unparalleled control and precision for semiconductor device development.

Learn more ›

Circuit Edit

Advanced, dedicated circuit edit and nanoprototyping solutions, which combine novel gas-delivery systems with a broad portfolio of chemistries and focused ion beam technology, offer unparalleled control and precision for semiconductor device development.

Learn more ›

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Electron microscopy services for
semiconductors

To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.

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