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The rapid growth in advanced packaging applications, complex interconnect schemes and higher performance power devices is creating unprecedented failure localization and analysis challenges. Defective or underperforming semiconductor devices often show an anomalous distribution of the local power dissipation, leading to local temperature increases. Thermo Scientific ELITE system utilizes Lock-in IR Thermography (LIT) to accurately and efficiently locate these areas of interest.
LIT is a form of dynamic IR thermography which provides a much better signal-to-noise ratio, increased sensitivity and higher feature resolution than steady-state thermography. LIT can be used in IC analysis to locate line shorts, ESD defects, oxide damage, defective transistors and diodes, and device latch-ups. LIT is performed in a natural ambient environment without requiring light-shielding boxes.
Capabilities:
- The highest sensitivity thermal emission system available in the market
- Real-time lock-in measurement
- Differential temperature resolution of < 1 mK after a few seconds; < 10 μK after a few hours
- Contactless absolute temperature mapping
- Through-package and stacked die analysis
- Six position turret with custom lenses optimized for MWIR emission
Stacked die analysis
Stacked-die present a unique challenge to the analyst. Whether dealing with a bonded or TSV die stack, LIT may be used to locate defects in X, Y and Z deep within the die stack on fully packaged devices.
"Unlimited" data accumulation time for better resolution
The higher the lock-in frequency, the higher the resulting spatial resolution. However, the higher frequency tends to reduce significantly the thermal emission to be detected. This is a limitation for many LIT systems. ELITE system overcomes this limitation by offering a unique system architecture in which higher frequency LIT data can be accumulated for an "unlimited" amount of time. Data resolution improves the longer data acquisition continues.
Longer acquisition time results in better sensitivity
The longer the system acquires data, the better the sensitivity. This is particularly valuable when attempting to acquire data at very low power levels or when one must acquire data from a weak failure mode.
Optional lens flexibility
The ELITE system is available with either a single lens and camera configuration or with the flexibility of a 6-position turret. A variety of custom, high-quality, MWIR microscope objectives are available including: 28 mm wide angle, 1x, 5x, and 10x yield an effective magnification of 20x, coupled with the 15 μm pixel pitch of the 640 InSb camera.
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The ability to locate a thermal source in 3D makes the ELITE system well-suited for stacked-die analysis.
Sensitivity varies with power level.
The ability to locate a thermal source in 3D makes the ELITE system well-suited for stacked-die analysis.
Sensitivity varies with power level.
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Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).
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Thermal Fault Isolation
Uneven distribution of local power dissipation can cause large, localized increases in temperature, leading to device failure. We offer unique solutions for thermal fault isolation with high-sensitivity lock-in infrared thermography (LIT).
ESD Compliance Testing
Electrostatic discharge (ESD) can damage small features and structures in semiconductors and integrated circuits. We offer a comprehensive suite of test equipment which verifies that your devices meet targeted ESD compliance standards.
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semiconductors
To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.
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