The Thermo Scientific Hyperion II System offers fast, accurate transistor probing for electrical characterization and fault localization in support of semiconductor technology development, yield engineering and device reliability improvement. The unparalleled stability of the Hyperion II System enables nanoprobing down to the 5 nm technology node and beyond. 

The Hyperion II System’s SPM technology enables PicoCurrent imaging, which is a technique to rapidly identify shorts, opens, leakage paths and resistive contacts with more than 1,000 times the sensitivity of passive voltage contrast. The scanning capacitance microscopy (SCM) module provides image-based fault localization for silicon on insulator (SOI) wafers, as well as high-resolution dopant profiling.

Capabilities

  • Proven nanoprobing solution for 5 nm technology.
  • Configurable with four, six or eight probes for added flexibility and capability.
  • Auto tip exchange and auto tip approach for increased productivity and ease of use. 

Measurement modes

The Hyperion II System’s advanced measurement modes include: 

  • Low-noise, high-resolution capacitance-voltage (C-V) to study oxide layers and interface traps.
  • Pulsed IV to identify open and resistive gate defects.
  • Elevated temperature probing to study device reliability.

Current voltage (I-V) measurements

Probing multiple transistors within the target area to localize a fault can be time-consuming. The Hyperion II System combines PicoCurrent imaging with I-V probing to quickly find potential defects and measure current-voltage curves, without introducing measurement-related shifts.


Key Features

Fast fault localization

Integrated PicoCurrent Imaging and Scanning Capacitance Microscopy (SCM) quickly identifies fault candidates for nanoprobing.

eFast guided operation

Semi-automated step by step guided operation for increased productivity, ease of use and reduced training burden.

No ebeam-sample interaction

Atomic force probes image and probe features, eliminating need for SEM imaging and vacuum system.


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Applications

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Semiconductor Pathfinding and Development

Advanced electron microscopy, focused ion beam, and associated analytical techniques for identifying viable solutions and design methods for the fabrication of high-performance semiconductor devices.

Semiconductor Failure Analysis

Semiconductor Failure Analysis

Increasingly complex semiconductor device structures result in more places for failure-inducing defects to hide. Our next-generation workflows help you localize and characterize subtle electrical issues that affect yield, performance, and reliability.

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Physical and Chemical Characterization

Ongoing consumer demand drives the creation of smaller, faster, and cheaper electronic devices. Their production relies on high-productivity instruments and workflows that image, analyze, and characterize a broad range of semiconductor and display devices.

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ESD Semiconductor Qualification

Every electrostatic discharge (ESD) control plan is required to identify devices that are sensitive to ESD. We offer a complete suite of test systems to help with your device qualification requirements.

Nanoprobing

As device complexity increases, so does the number of places defects have to hide. Nanoprobing provides the precise localization of electrical faults, which is critical for an effective transmission electron microscopy failure analysis workflow.

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Nanoprobing

As device complexity increases, so does the number of places defects have to hide. Nanoprobing provides the precise localization of electrical faults, which is critical for an effective transmission electron microscopy failure analysis workflow.

Learn more ›

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Electron microscopy services for
semiconductors

To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.

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