The Thermo Scientific Hyperion II System offers fast, accurate transistor probing for electrical characterization and fault localization in support of semiconductor technology development, yield engineering and device reliability improvement. The unparalleled stability of the Hyperion II System enables nanoprobing down to the 5 nm technology node and beyond.
The Hyperion II System’s SPM technology enables PicoCurrent imaging, which is a technique to rapidly identify shorts, opens, leakage paths and resistive contacts with more than 1,000 times the sensitivity of passive voltage contrast. The scanning capacitance microscopy (SCM) module provides image-based fault localization for silicon on insulator (SOI) wafers, as well as high-resolution dopant profiling.
The Hyperion II System’s advanced measurement modes include:
Current voltage (I-V) measurements
Probing multiple transistors within the target area to localize a fault can be time-consuming. The Hyperion II System combines PicoCurrent imaging with I-V probing to quickly find potential defects and measure current-voltage curves, without introducing measurement-related shifts.
Capacitance voltage (C-V) measurements
C-V is used to study oxide layers, interface traps and charge carrier densities. The Hyperion II System offers high-resolution C-V with excellent impedance control, low leakage and very low noise.
Fast fault localization
Integrated PicoCurrent Imaging and Scanning Capacitance Microscopy (SCM) quickly identifies fault candidates for nanoprobing.
eFast guided operation
Semi-automated step by step guided operation for increased productivity, ease of use and reduced training burden.
No ebeam-sample interaction
Atomic force probes image and probe features, eliminating need for SEM imaging and vacuum system.
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To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.