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The ability to improve yield and reliability includes detailed defect analysis. Design debugging of marginal failures can be more challenging due to voltage or timing issues within the device. Determining the root cause of parametric failure requires isolation of its actual location inside the device and the ability to access the relevant circuitry without damaging the device or obscuring the defects.
The Thermo Scientific Meridian 7 System provides visible light laser voltage imaging (LVI), probing (LVP), and dynamic laser stimulation (DLS/LADA) on sub-10 nm devices. By avoiding a requirement for ultra-thin substrates, it preserves the integrity and functionality of the device under test to provide a reliable and practical production solution.
The Meridian 7 System is available in two configurations:
- Meridian 7D System: Combined 1064 nm and 785 nm dual-SIL laser scanning microscope (LSM) system
- Meridian 7S System: 785 nm-only LSM system with optional advanced sample cooling for high-speed testing where sample thermal management may be necessary to prevent thermal runaway from altering chip performance
Dynamic Optical Fault Isolation to identify parametric defects
- Characterization under test conditions for advanced devices at 10 nm node and below
- Optional Time-resolved LADA
High bandwidth for accurate timing analysis
- 7 GHz bandwidth for at-speed tests
- Measure 50 picosecond rise time
Enhanced optical resolution for better fault localization
- High-resolution visible and infrared light
- 785 nm analysis limits sample prep to 5 µm
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High resolution 785nm Laser Scanning Microscopy image with DUT sample preparation to 5um
Visible light enables a smaller spot size, minimizing cross-talk from neighboring transistors during Laser Voltage Probing (LVP) analysis.
Device frequency mapping with 785nm Laser Voltage Imaging (LVI).
TR-LADA for Dynamic OFI
Preserving sensitive circuit areas while delivering greater defect localization capabilities is what the new TR-LADA option can do for your Meridian Optical Fault Isolation system.
High resolution 785nm Laser Scanning Microscopy image with DUT sample preparation to 5um
Visible light enables a smaller spot size, minimizing cross-talk from neighboring transistors during Laser Voltage Probing (LVP) analysis.
Device frequency mapping with 785nm Laser Voltage Imaging (LVI).
TR-LADA for Dynamic OFI
Preserving sensitive circuit areas while delivering greater defect localization capabilities is what the new TR-LADA option can do for your Meridian Optical Fault Isolation system.
Semiconductor Pathfinding and Research
Advanced electron microscopy, focused ion beam, and associated analytical techniques for identifying viable solutions and design methods for the fabrication of high-performance semiconductor devices.
Semiconductor Failure Analysis
Increasingly complex semiconductor device structures result in more places for failure-inducing defects to hide. Our next-generation workflows help you localize and characterize subtle electrical issues that affect yield, performance, and reliability.
Optical Fault Isolation
Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.
Optical Fault Isolation
Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.
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Electron microscopy services for
semiconductors
To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.
Electron microscopy support and resources
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