The Thermo Scientific Meridian IV system is the preferred choice for developers of advanced, low-voltage, high-density semiconductor devices requiring performance and the ability to diagnose wide ranging failure modes, including parametric failures and those resulting from design-process marginalities.
Capabilities
- High sensitivity extended-wavelength DBX photon emission detection
- Standard InGaAs photon emission detection
- Laser Scanning Microscope with multiple wavelength options for static and dynamic analysis
- High-resolution, patented, and industry-proven Point&Click Solid Immersion Lens (SIL)
- Inverted platform for easy ATE direct docking
- Compatibility with most popular third-party EDA applications
- Works easily with packaged parts and wafer/die backside samples
The advanced Thermo Scientific Sierra user environment and analysis software package includes the ability to construct high quality, high magnification image mosaics. Individual high magnification images are acquired and then seamlessly integrated to form a high resolution image of the device over a large field of view.
Photon emission microscopy
Photon emission microscopy (PEM) on the Meridian platform is based on an optimized combination of a high sensitivity InGaAs or DBX camera and high numerical aperture (NA) aberration-corrected optics. The Meridian IV system provides high-resolution through-silicon imaging for backside device analysis. Low noise and high sensitivity enable emission data with unmatched signal-to-noise ratios, resulting in rapid, transistor-level fault detection. The DBX configuration provides industry-leading results even on sub-0.5 Vdd devices.
Laser scanning microscope
The laser scanning microscope (LSM) option transforms the Meridian into a high-resolution, high-contrast confocal laser scanning system optimized for both static and dynamic failure analysis. Static Laser Stimulation (SLS) applications such as OBIRCH, OBIC, and Seebeck Effect Imaging (SEI) identify the sources of shorts and resistive faults, complementing emission-based techniques.
Additionally, dynamic techniques such as Soft Defect Localization and Laser Voltage Imaging and Laser Voltage Probing enable the user to localize parametric failures, debug design and timing issues, and map transistor frequencies.
Semiconductor Pathfinding and Development
Advanced electron microscopy, focused ion beam, and associated analytical techniques for identifying viable solutions and design methods for the fabrication of high-performance semiconductor devices.
Semiconductor Failure Analysis
Increasingly complex semiconductor device structures result in more places for failure-inducing defects to hide. Our next-generation workflows help you localize and characterize subtle electrical issues that affect yield, performance, and reliability.
Optical Fault Isolation
Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.
Optical Fault Isolation
Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.
Electron microscopy services for
semiconductors
To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.
