The Thermo Scientific Meridian S System is designed to perform inverted photon emission (EMMI) and laser scanning microscopy analysis on devices stimulated by static bias via probe card or micro-probes. With the overall cost of ownership for the system being a critical aspect of profitability, the Meridian S System offers a range of photon emission options, dual-side probing flexibility and an upgrade path to dynamic optical fault isolation capabilities such as laser voltage imaging/probing and soft defect localization.

The Meridian S System is designed for use in failure analysis labs worldwide, aiding in:

  • Identification of systematic process, design or integration issues
  • Isolation of root cause for random electrical failures

Key Features

Fault Diagnostic with Active Probe Technology

High-sensitivity, lock-in capable, noise-eliminating static laser stimulation/optical beam induced resistance change (SLS/OBIRCH) detection enabled by Fault Diagnostic with Active Probe Technology.

Photon emission

Photon emission options spanning a range of sensitivity requirements for isolating shorts, detecting areas of excess leakage, and mapping active regions.

Ease-of use

Probing setup and software designed for ease-of-use and productivity.

Scalable and upgradable

Fully scalable and upgradable optical platform.


Specifications

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Inverted optical system

Combo system: LSM + PEM standard, with optional LSM-only or PEM-only configurations

220VAC, 50Hz/60Hz

Standard 9” x 9” load board interface, plus customizable alternatives

Dual-side microprobing and Probe Card configurations available

Stage repeatability ≤2μm

Optional laser marker for defect redetection

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Applications

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Semiconductor Pathfinding and Development

Advanced electron microscopy, focused ion beam, and associated analytical techniques for identifying viable solutions and design methods for the fabrication of high-performance semiconductor devices.

Semiconductor Failure Analysis

Semiconductor Failure Analysis

Increasingly complex semiconductor device structures result in more places for failure-inducing defects to hide. Our next-generation workflows help you localize and characterize subtle electrical issues that affect yield, performance, and reliability.

Optical Fault Isolation

Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.

Learn more ›

Optical Fault Isolation

Increasingly complex designs complicate fault and defect isolation in semiconductor manufacturing. Optical fault isolation techniques allow you to analyze the performance of electrically active devices to locate critical defects that cause device failure.

Learn more ›

Documents

Datasheets

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Electron microscopy services for
semiconductors

To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.

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