Search
Search
The Thermo Scientific Talos F200E (S)TEM (Scanning Transmission Electron Microscope) provides high-resolution STEM and TEM imaging with minimal distortion, combined with high-throughput energy-dispersive X-ray spectroscopy (EDS) functionality, tailored for a wide range of semiconductor defect analysis and research applications.
Supporting the fast pace of process development and yield ramp significantly challenges semiconductor analysis labs, as they must provide repeatable, high-resolution characterization of a wide variety of materials and devices. The Talos F200E (S)TEM was designed with these labs in mind, enabling faster EDS analysis, low TEM image distortion, and streamlined operation with unified functionality in Thermo Scientific Velox Software. The speed and repeatability improvements make the Talos F200E (S)TEM an excellent choice for device analysis, defect characterization, and yield support.
The Thermo Scientific Talos F200E (S)TEM is designed for semiconductor laboratories that require efficient, high-resolution TEM imaging and quantitative analysis. It is well suited for semiconductor laboratories that support the characterization of power devices, memory, display technologies, advanced packaging, and other leading semiconductor structures.
The Thermo Scientific Talos F200E (S)TEM supports a wide range of semiconductor applications, including failure analysis, metrology, defect characterization, yield improvement, process development, and tomography for 3D compositional analysis. It is designed to enable fast, precise, and quantitative characterization of semiconductor devices in multiple dimensions.
The Thermo Scientific Talos F200E (S)TEM is designed to support the characterization of power and memory devices, display technologies, advanced packaging, and a wide range of other semiconductor structures that require high-resolution imaging and elemental analysis.
The Thermo Scientific Talos F200E (S)TEM offers high-resolution TEM and STEM imaging with simultaneous multi-signal detection. With the high-brightness X-CFEG, the instrument has an STEM resolution ≤0.14 nm, a TEM information limit ≤0.11 nm, and a TEM line resolution of ≤0.10 nm. These specifications support high-resolution imaging for advanced semiconductor characterization. The Talos F200E (S)TEM is also capable of integrated differential phase contrast (iDPC) imaging, high-angle annular dark field (HAADF) imaging, and contrast-optimized STEM imaging, which offer complimentary structural and compositional information.
The Thermo Scientific Talos F200E (S)TEM improves measurement reliability by combining optimized electron optics with a low-distortion camera and a stable instrument platform. These features help produce consistent, repeatable measurements across semiconductor devices.
The Thermo Scientific Talos F200E (S)TEM is capable of three-dimensional volume analysis using a combination of STEM imaging and EDS tomography, supporting the structural and compositional characterization of 3D semiconductor devices.
The Thermo Scientific Talos F200E (S)TEM improves productivity by combining automated alignment, STEM focus, and stigmation, with fast mode switching, drift-corrected frame integration, and live image rotation through synchronized stage movement. These features help you collect more high-quality data while reducing manual intervention.
Yes, the Thermo Scientific Talos F200E (S)TEM supports remote system monitoring as well as the performance of basic operations through an intranet or internet connection.
The Thermo Scientific Talos F200E (S)TEM simplifies routine operation through a number of features including the Align Genie for automated alignments, AutoSTEM for autofocus and autostigmation, and the SmartCam digital search-and-view camera for sample navigation. These features help the Talos F200E (S)TEM reduce setup time and improve reproducibility between users.
For Research Use Only. Not for use in diagnostic procedures.