Automated defect analysis with Helios 5 EXL DualBeam

Identifying the root cause of defects, often buried within high-aspect-ratio 3D NAND and DRAM structures, is becoming more challenging due to increased device fabrication complexities. To overcome these challenges, we introduce two automated defect root cause analysis workflows using the Thermo Scientific Helios 5 EXL Wafer DualBeam FIB-SEM.

By enabling automated defect root cause analysis directly on 300 mm wafers, these workflows eliminate the need for traditional die-level lab workflows. Both methods allow wafers to stay in the fab instead of breaking wafers in the lab environment. This maximizes productivity and optimizes resource utilization, while also ensuring higher defect localization accuracy in memory device fabrication.

Workflows described in the app note:

• Deep mill—Buried defect analysis in 3D NAND and MEMS devices. Deep mill exposes a cross-section designed for fast turnaround time of high-aspect-ratio device defect analysis with high-resolution SEM imaging.
• 1-click piece extraction—Buried defect analysis in DRAM and 3D NAND devices. Piece extraction provides an easy TEM sample preparation method for intensive defect analysis.