The continued trend of shrinking semiconductor features means that failure analysis is more challenging than ever before. Additionally, more advanced designs and complex 3D architectures result in an increasing number of wiring layers, more complex memory cells and more sensitive gate structures.

Due to this reduction in feature dimensions and increase in structure complexity, device delayering is becoming more and more important in detecting electrical faults (as well as other phenomena that contribute to device failure). While damage-free de-processing of single layers is critical, it can also be too time consuming for various industrial and R&D applications.

Thermo Fisher Scientific offers a unique combination of plasma FIB technology and proprietary Thermo Scientific Dx Chemistries, which enable automated and damage-free delayering of semiconductor devices, including 7/5-nm logic samples and 3D NAND memory devices.  Automatic de-processing allows you to access buried information for advanced devices that would otherwise be unattainable.

Thermo Fisher Scientific's unique Plasma FIB delayering process complements the nProber IV and Hyperion II, delivering a robust nanoprobing and transistor characterization workflow. These instruments also provide advanced failure analysis of 3D packages, along with a wide range of other large-area focused-ion-beam (FIB) processing applications. See our product pages for more information.

 

Advanced logic device after device delayering.
A 200 µm x 200 µm advanced logic device, delayered using a chemical delayering method on a plasma focused ion beam (PFIB) instrument.

Device delayering workflow example

 

 

Samples


Semiconductor Materials and Device Characterization

As semiconductor devices shrink and become more complex, new designs and structures are needed. High-productivity 3D analysis workflows can shorten device development time, maximize yield, and ensure that devices meet the future needs of the industry.

Learn more ›


Applications

pathfinding_thumb_274x180_144dpi

Semiconductor Pathfinding and Development

Advanced electron microscopy, focused ion beam, and associated analytical techniques for identifying viable solutions and design methods for the fabrication of high-performance semiconductor devices.

physical_characterization_thumb_274x180_144dpi

Physical and Chemical Characterization

Ongoing consumer demand drives the creation of smaller, faster, and cheaper electronic devices. Their production relies on high-productivity instruments and workflows that image, analyze, and characterize a broad range of semiconductor and display devices.

yield_ramp_metrology_2_thumb_274x180

Yield Ramp and Metrology

We offer advanced analytical capabilities for defect analysis, metrology, and process control, designed to help increase productivity and improve yield across a range of semiconductor applications and devices.


Products

Style Sheet for Instrument Cards Original

Helios 5 DualBeam

  • Fully automated, high-quality, ultra-thin TEM sample preparation
  • High throughput, high resolution subsurface and 3D characterization
  • Rapid nanoprototyping capabilities

Helios G4 PFIB DualBeam

  • Gallium-free STEM and TEM sample preparation
  • Multi-modal subsurface and 3D information
  • Next-generation 2.5 μA xenon plasma FIB column

Auto Slice and View 4.0 Software

  • Automated serial sectioning for DualBeam
  • Multi-modal data acquisition (SEM, EDS, EBSD)
  • On-the-fly editing capabilities
  • Edge based cut placement

Ifast Software

  • Macro recorder for faster recipe creating
  • Runner for unattended overnight operation
  • Alignment tools: Image recognition and edge finding
Style Sheet for Media Gallery Tabs

Contact us

Style Sheet for Support and Service footer
Style Sheet for Fonts
Style Sheet for Cards

Electron microscopy services for
semiconductors

To ensure optimal system performance, we provide you access to a world-class network of field service experts, technical support, and certified spare parts.

Learn more ›