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ELITE System Resources

ELITE System technology and application resources

Welcome to the resources page where you can learn more about the Thermo Scientific ELITE System’s technology and its applications from our product and applications specialists.

Frequently asked questions about the ELITE System

  • What is the ELITE System?
    The Thermo Scientific ELITE System is a high-resolution lock-in thermography tool for non-destructive fault localization and isolation. It is a critical solution for through-package, on-die or even on-board electrical defect localization, capable of capturing a wide range of defect types, including power or line shorts, ESD defects, current leakage, oxide damage, defective transistors and diodes, device latch-up, and resistive opens. The high defect capture rate of ELITE Systems accelerates learning cycles and enables confident root-cause analysis.

  • What analytical techniques is the ELITE System capable of?
    While designed for fault localization with lock-in thermography, the flexible ELITE System is also capable of laser scanning microscopy and the measurement of optical-beam-induced resistance change (OBIRCH). This combination of techniques goes beyond thermal fault isolation, adding precise navigation and localization with microscopy as well as the sensitive detection of electrical defects with OBIRCH.

  • What is lock-in thermography?
    Lock-in thermography is a non-destructive method that uses infrared imaging to detect temperature variations in a device, which can be used to localize failures. During lock-in thermography, a pulsed bias is applied to the device, which produces a small amount of heat. This causes periodic, phase-shifted changes in surface temperature that can be measured with an IR camera. Using this signal, electrical faults can be localized in 3D, as the amplitude of the periodic temperature fluctuations provides the x-y location of the fault, while their phase determines the depth (z location).

  • What is optical-beam-induced resistance change, or OBIRCH?
    Optical-beam-induced resistance change is a method of electric defect analysis where a laser is used to scan across a semiconductor device, which has a constant voltage applied to it. The laser irradiates individual circuits and should induce a known change in the voltage and current of the circuit. Any deviations, therefore, can be attributed to defects in the circuit. This method is highly sensitive and can detect electrical shorts across a wide range of devices, acting as a valuable, complimentary method to lock-in thermography.

  • What are some critical applications of the ELITE System?
    The ELITE System can analyze faults and failures in a broad range of semiconductor devices, including defects in packaging, memory and logic devices, and even high-voltage power devices. This flexibility is the result of the ELITE System’s ability to pinpoint defects not only relative to their x-y position but also depth (z position), such that advanced 2.5D–3D devices can be characterized just as well as 2D structures.

Datasheet

I-ELITE System datasheet

Learn how the ELITE System delivers non-destructive defect localization with high sensitivity and precise 3D accuracy for advanced semiconductor devices.

ELITE DX System datasheet

Learn how the ELITE DX System enables fast, non-destructive defect localization with high sensitivity and accurate results.

ELITE VX System datasheet

Learn how the ELITE VX System enables non-destructive defect localization with high sensitivity and precise 3D accuracy for power devices.

ELITE System datasheet

Learn more about which ELITE System best supports improving your FA workflow.

Application notes and infographics

ELITE System RF-LIT Infographic

ELITE System Sensitivity Infographic

Learn how the ELITE System supports power device workflows

For Research Use Only. Not for use in diagnostic procedures.