New CMOS camera technology enables a significant improvement in sensitivity and speed. Choose from our Quasor II electron backscatter diffraction (EBSD) detector for fast collection rates and accurate pattern detection and indexing at an affordable price. Or take a look at our new Lumis EBSD detector for the ultimate in EBSD technology.
Electron Backscatter Diffraction for SEMs
Manage speed, quality and sensitivity with the latest CMOS sensor technology, advanced optics and new indexing software for EBSD data collected at ultra-low SEM probe currents.
Rapidly acquire high resolution electron backscatter patterns (EBSP) with an all-in-one, integrated compact system featuring a large format sensor and proprietary reverse zoom optics with in-built CMOS sensor binning.
Analyse beam sensitive or dose restricted materials, where higher probe current may introduce contamination or drift, at ultra-low probe currents (below 10 pA). Rapidly survey the sample to find areas of interest with an integrated 5-diode forescatter detector.
Lumis EBSD technology is integrated with our Pathfinder microanalysis platform for concurrent EBSD, EDS and WDS analysis.
We’ve added CMOS sensor technology to our popular Quasor EBSD system. With an improved lens and phosphor, and highly optimized band detection and indexing, the Quasor II detector is ideal for EBSD analysis at an affordable price. Software includes automatic phase detection, grain size maps and statistics, texture analysis and more.
The Quasor II and Lumis EBSD systems integrate within Thermo Scientific™ Pathfinder™ X-ray microanalysis software. Sample characterization becomes a quick and complete process thanks to fast and accurate elemental analysis provided by a Thermo Scientific™ UltraDry™ EDS detector coupled with the speed and flexibility of the EBSD system. Our exclusive Thermo Scientific™ COMPASS™ phase mapping enables you to visualize both the structural phase and the chemical phase of the material in one shot.
|Lumis EBSD detector||Quasor II EBSD detector|
|Camera Type||High sensitivity CMOS||High sensitivity CMOS|
|Camera Dwell Time||0.1 millisecond to 5 seconds||0.1 millisecond to 5 seconds|
|Collection Speed||2000 frames per second||600 frames per second|
|Resolution||1920 x 1200 pixels (>2.2 megapixels)||640 x 480 (>0.3 megapixels)|
|Camera Binning||Up to 4X4 + 16x optical zoom||Up to 2X2|
|Signal-to-noise Ratio||45 dB (typical)||45 dB (typical)|
|Quantum Efficiency||70% (typical)||70% (typical)|
|Electron Image Acquisition||Up to 4096 x 4096 pixels at 1 ms dwell time||Up to 64 x 64 pixels at 1 ms dwell time|