Tetramethylammonium hydroxide, 1.0 M aq. soln., ACS

Tetramethylammonium hydroxide is used as anisotropic etching of silicon, as a basic solvent in the development of acidic photo resist in the photolithography process, and is highly effective in stripping photo resist, and is used as a surfactant in the synthesis of ferrofluid, to inhibit nanoparticle aggregation.

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