Tetramethylsilane, 99.9%
Tetramethylsilane, 99.9%
Tetramethylsilane, 99.9%
Thermo Scientific Chemicals

Tetramethylsilane, 99.9%

CAS: 75-76-3 | C4H12Si | 88.23 g/mol
製品番号(カタログ番号) A13148.14
または、製品番号A13148-14
価格(JPY)
-
数量:
25 g
一括またはカスタム形式をリクエストする
化学物質識別子
CAS75-76-3
IUPAC Nametetramethylsilane
Molecular FormulaC4H12Si
InChI KeyCZDYPVPMEAXLPK-UHFFFAOYSA-N
SMILESC[Si](C)(C)C
さらに表示
CommentMaterial Sourced in UK and US
Identification (FTIR)Conforms (UK Sourced Material)
Refractive Index1.3575-1.3605 @ 20?C (UK Sourced Material)
FormLiquid
Appearance (Color)Clear colorless
さらに表示

Tetramethylsilane is used as a building block in organometallic chemistry. It acts as a by-product in the production of methyl chlorosilanes. Also, it serves as a precursor to silicon dioxide or silicon carbide. It is used as internal reference standard for the calibration of chemical sift for 1, 13 and 29 NMR spectroscopy. In addition, it is used as an aviation fuel.

This Thermo Scientific Chemicals brand product was originally part of the Alfa Aesar product portfolio. Some documentation and label information may refer to the legacy brand. The original Alfa Aesar product / item code or SKU reference has not changed as a part of the brand transition to Thermo Scientific Chemicals.

Applications
Tetramethylsilane is used as a building block in organometallic chemistry. It acts as a by-product in the production of methyl chlorosilanes. Also, it serves as a precursor to silicon dioxide or silicon carbide. It is used as internal reference standard for the calibration of chemical sift for 1, 13 and 29 NMR spectroscopy. In addition, it is used as an aviation fuel.

Solubility
Miscible with water, ethanol, ether and most organic solvents. Immiscible with cold sulfuric acid.

Notes
Store in a cool place. Incompatible with strong acids, strong bases and strong oxidizing agents.
RUO – Research Use Only

General References:

  1. Internal standard for NMR spectroscopy.
  2. Kim, B. G.; Yoon, J. Y.; Yoo, C. H.; Nam, D. H.; Lee, M. H.; Seo, W. S.; Jeong, S. M. Condensation of vapor species at the outlets in high temperature chemical vapor deposition using tetramethylsilane as a precursor for SiC bulk growth. CrystEngComm 2015, 17 (16), 3148-3152.
  3. Hei, H.; Yu, S.; Shen, Y.; Li, X.; Ma, J.; Tang, B.; Tang, W. Growth of β-SiC interlayers on WC-Co substrates with varying hydrogen/tetramethylsilane flow ratio for adhesion enhancement of diamond coatings. Surf. Coat. Technol. 2015, 272, 278-284.