Talos F200E (S)TEM Applications

High-throughput performance for semiconductor analysis applications

Demand for faster, smaller, power-efficient, and more interconnected devices continues to drive atomic-scale technology developments and the need for S/TEM analysis. With semiconductor inflections that incorporate advanced packaging schemes, new structures, and novel materials, transmission electron microscopes are invaluable for characterization, metrology, and failure analysis. Designed to meet the needs of the semiconductor industry, the Thermo Scientific Talos F200E (S)TEM provides high-resolution S/TEM imaging with minimal distortion and repeatable, high-throughput performance for a wide range of semiconductor analysis applications.

Semiconductor failure analysis with precision

Physical failure analysis relies on destructive, but extremely precise, lamella preparation to reveal the insights that only S/TEM resolution can provide. Whether analyzing mature logic nodes or advanced devices with increasingly shrinking dimensions, atomic-scale information that is reliable and repeatable with high throughput will help enhance the performance of any lab and can be achieved with confidence using the Thermo Scientific Talos F200E (S)TEM.

Find hidden defects with ease across length scales.

Power semiconductor analysis with high-resolution, low distortion S/TEM data

With the transition to compound semiconductors in advanced power devices comes a need for atomic-level analysis. Transmission electron microscopy has become the benchmark technique for measuring epilayer and oxide thickness, as well as analyzing defect propagation, diffusion, and strain across the epilayer stack. With such a wide application space, having a low-distortion, high-resolution, fast, and flexible instrument, like the Talos F200E (S)TEM is essential.

SiC MOSFET with high angle annular diffraction (HAADF) imaging and EDS analysis.

Advanced packaging analysis with S/TEM insights

Although advanced package designs continue to increase in height and require large-volume analysis, at the same time, interconnects and interfaces within the package layers are also shrinking in pitch, with finer and more complex structures seen in TSV fabrication and hybrid bonding requiring S/TEM insights. Following sample preparation, the Talos F200E (S)TEM helps enable the imaging and identification of the chemical and structural composition of defects in these regions. The Talos F200E (S)TEM offers the repeatability and speed needed to address the demand for fast-turn TEM data.

EDS map of Cu and Ni in semiconductor packaging interfaces.

Rapid TEM imaging for memory device analysis

TEM is widely employed by memory manufacturers for visualizing and assessing the intricate 3D NAND memory cells, as well as the transistor and capacitor structures in DRAM. This atomic-resolution data plays a pivotal role both in achieving precise control over critical dimensions (CD) that are not readily apparent and in conducting comprehensive defect analysis and characterization. The Talos F200E (S)TEM supports rapid TEM imaging and defect analysis, bolstered by the support of X-ray energy dispersive spectroscopy (EDS).

S/TEM image and EDS map of 3D NAND channel captured with Talos F200E (S)TEM

For Research Use Only. Not for use in diagnostic procedures.