Electronic, photonic and magnetic materials are key drivers in technological advancements for information storage, processing and delivery.
Materials science combines chemistry, physics and engineering to develop versatile new materials and processes for electronics that scale down to the nano level. As information grows exponentially, the push for new materials continues, leading to more advances in electronics, photonics and magnetic material.
Raman imaging is used in photonics to measure waveguides and to explore potential new electronic materials from sources such as aligned carbon nanotubes. Raman, XPS, XRF, and XRD techniques are frequently used in many areas of investigation, including the analysis of semiconductor materials to evaluate stress in silicon.
The use of platinum group metals (PGMs)—platinum, palladium, rhodium, iridium, ruthenium and osmium—is prevalent in electronics, and demand for these materials is increasing. Read this blog on the many uses of these types of metals and the considerations that weigh in in on the development and production of electronics.
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|Technique||Asset Type||Asset Title|
|EDS||Application Note||Ultra-Fast Mapping of a Semiconductor Sample with Low Accelerating Voltage at High Magnification|
|FTIR||Application Note||Quantitative Determination of Hydrogen Concentration in Silicon Nitride Dielectric Films on Silicon Wafers using FTIR Spectroscopy|
|WDXRF||Blog post||Platinum Group Metals Connect: Electronics Applications|
|WDXRF||Application Note||Analysis of TFT Glass with ARL PERFORM'X WDXRF Spectrometer|
|XRD||Application Note||Investigation of Ni on Si Thin Film with ARL EQUINOX 100 X-ray Diffractometer|
|XPS||Application Note||Understanding the Chemical and Electronic Properties of OLED Materials|
|XPS||Application Note||Identifying Structures on a Plasma-modified Polymer Surface|
|XPS||Application Note||Confirming the Layer Structure of an Organic FET Device|
|XPS||Application Note||The Karlsruhe Micro Nose, KAMINA|
|XPS||Application Note||Angle Resolved XPS Analysis for the Characterization of Self Assembled Monolayers|
|XPS||Application Note||Multi-technique Surface Characterization of Organic LED Material|
|XPS||Application Note||Depth Profiling of an Organic FET with XPS and Argon Cluster Ions|
This dual-mode ion source enables depth profile analysis and surface cleaning of both hard and soft materials on the same XPS instrument.
XPS instrument with multi-technique capabilities measures depositions, showing the thickness of materials in deposition cycles. ISS shows if the deposition has partial coverage of the layer. REELS yields band gap data. Raman provides information about structures in the layered material.
The shrinking of transistors in integrated circuits requires thinner and thinner dielectric layers between the gate electrode and the channel. To continue developing smaller sizes, silicon dioxide must be replaced as the dielectric material because, at the thickness required for the transistor design, the leakage current would become unacceptable. So there has been a move toward materials having a high dielectric constant (high-k dielectrics) which brings some new analytical requirements. In addition to layer thickness, these parameters also become important:
The whole dielectric layer can be analyzed at near normal electron emission angles without removing any material. XPS provides information about the chemistry of the layers and their interfaces while angle resolved XPS (ARXPS) provides information about layer thickness and the distribution of materials within the layer. ARXPS is non-destructive and avoids the use of sputtering with an ion beam. Sputtering has been shown to alter the composition of the layer and causes atomic mixing, both of which can cause a misinterpretation of the data.