Semiconductor Pathfinding and Development

The increasing complexity of semiconductor device structures, along with the shrinking of structural dimensions, means that designing next-generation devices is more challenging and time-consuming than ever before. This, coupled with the fact that the number of technology and design options available is increasing, means a lower probability that any particular design will be commercially successful. As a result, device manufacturers need reliable tools for pathfinding that reduce the number of viable options available and help them implement solutions faster.

The complexity of considering all the chip, package, and system integration options that exist has made implementation an intimidating task. As a result, continuing evolution of the most advanced pathfinding capability has become a requirement in efficient semiconductor device design. Adding to this level of complexity are structures with multifaceted 3D architectures. Isolating defects or resolving material interfaces in a focused-ion-beam (FIB) cut structural cross-section requires highly precise preparation and subsequent scanning electron microscopy (SEM) or scanning transmission electron microscopy (STEM) imaging. Precision FIB editing tools can also perform microsurgery and nanoprototyping of new circuit designs. Finally, due to limited floorspace and budgets, labs are pushing to have multiple analysis options in a single system to get the most comprehensive data in the shortest possible time.

Thermo Fisher Scientific provides a full suite of analytical instruments that enable advanced R&D on innovative logic, memory, power and display device technologies. We offer the most advanced capability to perform high-end atomic-level research and prototyping, using STEM and FIB microscopy.

Semiconductor pathfinding and device development workflow examples

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